| 摘要 |
PURPOSE: A method for fabricating a gate electrode of a semiconductor device is provided to prevent an etch loss of a semiconductor substrate by forming a gate pattern inside a trench, and to guarantee a contact area of a storage node contact without reducing a gate channel by forming a nitride sidewall on the sidewall of the gate pattern inside the trench. CONSTITUTION: An oxide layer is formed on a semiconductor substrate(21). The oxide layer is selectively patterned to form the trench exposing a predetermined portion of the semiconductor substrate where a subsequent gate pattern is to be formed. Polysilicon(25a) is formed on the exposed semiconductor substrate. The first nitride layer sidewall(26) is formed on the polysilicon, adjacent to the sidewall of the trench. Tungsten(27a) fills a predetermined portion of the inside of the trench, adjacent to the first nitride sidewall and the polysilicon. A hard mask(28) has the same height as the surface of the oxide layer, adjacent to the tungsten and the first nitride layer sidewall. The oxide layer is eliminated to expose a stacked layer composed of the polysilicon, the tungsten and the hard mask filled in the trench and the first nitride layer sidewall. The second nitride layer sidewall(30) is formed on the exposed first nitride layer sidewall and both sidewalls of the polysilicon.
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