发明名称 CHARGE COUPLED DEVICE
摘要 PURPOSE: A charge coupled device is provided to improve charge transfer efficiency degraded by uniform electric field according to bias of a poly gate forming HCCD and VCCD. CONSTITUTION: A plurality of photo diodes(not shown) produce electric charges. The VCCD(21) is interposed between the photo diodes and serves to transfer the charges produced by the photo diodes in a vertical direction. The HCCD(22) transfers the vertically transferred charges in a horizontal direction. A sensing amplifier(23) senses and amplifies the charges transferred from the HCCD(22) and then outputs them to a peripheral circuit. In particular, each of the VCCD(21) and the HCCD(22) has a titanium silicide(21a, 22a), which is formed in the center of the poly gate and thereby allows the charges to crowd along the center. The charge transfer efficiency is therefore improved.
申请公布号 KR20020032741(A) 申请公布日期 2002.05.04
申请号 KR20000063369 申请日期 2000.10.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JANG, GONG SAM;KIM, HYEON BYEONG
分类号 H01L27/146;(IPC1-7):H01L27/146 主分类号 H01L27/146
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