| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent a short between a plug and a gate without reducing a channel length. CONSTITUTION: An insulating layer(32) is formed on a semiconductor substrate(31). A gate(38) comprises a polysilicon layer formed on the insulating layer, a silicide layer and a cap insulator. An LDD(Lightly Doped Drain) region(39) is formed in the semiconductor substrate. An insulating spacer(40) is formed at both sidewalls of the gate(38). Highly doped source and drain regions(41) are formed in the semiconductor substrate. A plug(43) is electrically connected to the semiconductor substrate via an interlayer dielectric(42) and the insulating layer(32).
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