| 摘要 |
PURPOSE: To provide a method and an apparatus for vapor phase deposition, which can surely form a film with good characteristics on a substrate by supplying gas onto the base substance adequately, stably, and with a good reproducibility. CONSTITUTION: The CVD apparatus 1 comprises; a chamber 2 which is connected with gas supplying sources 31-34, through gas supplying pipes 51-54 provided with MFC 41-44 and valves 56-59; bypass pipes 71-74 which are connected to sites 61-64 of the gas supplying pipes 51-54 and to an exhausting pipe 4; and valves 76-79 arranged in these bypass pipes 71-74. These valves 76-79 and the valves 56-59 are alternatingly opened and closed to switch channels of each source gas. The method for vapor phase deposition further comprises stabilizing flow of the each source gas by such a valve operation, before introducing the gas in the chamber 2.
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