发明名称 SURFACE ACOUSTIC WAVE FILTER
摘要 <p>In a surface acoustic wave (SAW) filter having a substrate and electrodes formed on the substrate, an electrode has a base layer, a first metal layer made of Al or an Al-based metal and oriented in a constant direction to the substrate, a second metal layer which prevents Al atoms of the first metal layer from migrating vertically to the substrate, and a third metal layer for adjusting the film thickness. Thus, a SAW filter having an arbitrary film thickness enables the simultaneous attainment of a film quality of difficulty in grain boundary diffusion and micronization of the grain diameter of a film effective in stress resistance. Therefore, the SAW filter blocks the migration of Al atoms of the electrode due to a stress loaded on the electrode with the propagation of the SAW, so that the filter becomes excellent in power resistance.</p>
申请公布号 WO0235702(A1) 申请公布日期 2002.05.02
申请号 WO2001JP09303 申请日期 2001.10.23
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;TAKAYAMA, RYOICHI;NAKANISHI, HIDEKAZU;KAWASAKI, TETSUO;SAKURAGAWA, TORU;YOKOTA, YASUHIKO 发明人 TAKAYAMA, RYOICHI;NAKANISHI, HIDEKAZU;KAWASAKI, TETSUO;SAKURAGAWA, TORU;YOKOTA, YASUHIKO
分类号 H03H3/08;H03H9/02;H03H9/145;(IPC1-7):H03H9/145 主分类号 H03H3/08
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