发明名称 Semiconductor switching element used as a CMOS transistor has a control layer that extends in the same way as a contact layer up to a wiring layer
摘要 Semiconductor switching element comprises a substrate (1); a source region (2) and a drain region (3) for forming a channel region in the substrate; a dielectric layer (4) formed over the channel region; a control layer (5') for controlling the element; a contact layer (7) for contacting the source region and the drain region; an insulating layer (6) for insulating the contact layer and the control layer; and a wiring layer (8) for connecting the contact layer. The control layer extends in the same way as the contact layer up to the wiring layer. An Independent claim is also included for a process for the production of a semiconductor switching element. Preferred Features: The control layer and the contact layer are made from the same material, preferably a metal or doped semiconductor. The insulating layer is a BPSG, PSG or BSG layer.
申请公布号 DE10050362(A1) 申请公布日期 2002.05.02
申请号 DE20001050362 申请日期 2000.10.11
申请人 INFINEON TECHNOLOGIES AG 发明人 GEHRING, OLIVER
分类号 H01L21/225;H01L21/336;H01L21/8238;H01L27/092;(IPC1-7):H01L29/78 主分类号 H01L21/225
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