| 摘要 |
The invention concerns an edge-emitting semiconductor tunable laser (10) comprising a resonant cavity delimited by two reflectors (15, 20) one of which is fixed (15) and the other mobile (20), said cavity consisting of a first active gain section (1) with length L1 and a second tunable section of length L2. The invention is characterised in that the total length of the cavity L = to L1+L2 is not more than 20 mu m. |
