发明名称 Method and system for multi-pass correction of substrate defects
摘要 A method and system of location specific processing on a substrate is described. The method comprises acquiring metrology data for a substrate, and computing correction data for adjusting a first region of the metrology data on the substrate. Thereafter, a first gas cluster ion beam (GCIB) for treating the high gradient regions is established, and the first GCIB is applied to the substrate according to the correction data. The method further comprises optionally acquiring second metrology data following the applying of the first GCIB, and computing second correction data for adjusting a second region of the metrology data, or the second metrology data, or both on the substrate. Thereafter, a second gas cluster ion beam (GCIB) for treating the second region is established, and the second GCIB is applied to the substrate according to the second correction data.
申请公布号 US8293126(B2) 申请公布日期 2012.10.23
申请号 US20070864461 申请日期 2007.09.28
申请人 MACCRIMMON RUAIRIDH;HOFMEESTER NICOLAUS J.;CALIENDO STEVEN P.;TEL EPION INC. 发明人 MACCRIMMON RUAIRIDH;HOFMEESTER NICOLAUS J.;CALIENDO STEVEN P.
分类号 G01L21/30 主分类号 G01L21/30
代理机构 代理人
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