METHOD OF PRODUCING SILICON EPITAXIAL WAFERS

摘要

There is provided a process for manufacturing a silicon epitaxial wafer capable of manufacturing an epitaxial wafer, which exerts a stable IG capability without being affected by a thermal history of a substrate for epitaxial growth and has the IG capability excellent from an early stage of a device process, and particularly, canceling an IG shortage in an N/ N<+> epitaxial wafer caused by a problem that oxygen precipitation is hard to proceed in an N<+> substrate with a simple and easy way. RTA (rapid heating and rapid cooling heat treatment) is performed at a temperature of 1200 DEG C to 1350 DEG C for 1 to 120 seconds on a silicon substrate for epitaxial growth; further heat treatment is performed at a temperature of 900 DEG C to 1050 DEG C for 2 to 20 hours on the silicon substrate for epitaxial growth; and thereafter, an epitaxial layer is formed on a surface of the silicon substrate. <IMAGE>