| 摘要 |
The invention concerns a method for producing a very highly selective etching to obtain high-resolution patterns on a substrate and on industrial scale of production. The invention is characterised in that said method for etching a thin dielectric layer deposited on a semiconductor substrate (100) consists in: producing a configuration of patterns to be etched through a mask formed on the dielectric layer (101) by ultraviolet, deep or extreme ultraviolet radiation exposure (13), and revealing a photosensitive resin (102) constituting the mask; a selective interaction between the ions (10) of a beam of decelerated positive ions with multiple charge and the dielectric layer (101) which is exposed following the revelation. The beam with predetermined density ejects from said layer aggregated material (12) and forms therein zones (11) matching the patterns of the mask. A selective absorption by neutralisation (103) is produced between the ions of the beam and the mask opposite said ions. |
