| 摘要 |
A circuit configuration and a method for accelerating aging in an MRAM, in which additional means are provided in order to feed a higher current into a control line of a memory cell which is located nearer the soft-magnetic layer. A second transistor is inserted in parallel with the driver transistors, which form a first control unit. The second transistor supplies a current through the control line located nearer the soft-magnetic layer. The second transistor can drive a higher current through the control line and can be activated by means of a test mode.
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