BOND PAD OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A bond pad of a semiconductor device and a method for forming the same are provided to prevent a dishing phenomenon generated from a chemical mechanical polishing process by forming separately cooper patterns. CONSTITUTION: A lower insulating layer(102) and a lower cooper pattern(104) are formed on a semiconductor substrate(100). The first insulating layer pattern(108c) has a plurality of contact hole connected with the lower cooper pattern(104). The first cooper pattern(116) is connected electrically with the lower cooper pattern(104). The second insulating layer pattern(120c) is formed on the first cooper pattern(116). The second insulating layer pattern(120c) has a multitude of contact holes connected with the first cooper pattern(116). The second cooper pattern(128) is connected electrically with the first cooper pattern(116). A passivation layer(138A) is formed on the second cooper pattern(128). A bond pad(144) is formed by patterning a part of the passivation layer(138A). A conductivity improvement layer(140) is formed on the second cooper pattern(128).