发明名称 |
Contact structure for semiconductor devices and corresponding manufacturing process |
摘要 |
A contact structure for semiconductor devices which are integrated on a semiconductor layer is provided. The structure comprises at least one MOS device and at least one capacitor element where the contact is provided at an opening formed in an insulating layer which overlies at least in part the semiconductor layer. Further, the opening has its surface edges, walls and bottom coated with a metal layer and filled with an insulating layer.
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申请公布号 |
US2002050627(A1) |
申请公布日期 |
2002.05.02 |
申请号 |
US20010033508 |
申请日期 |
2001.12.28 |
申请人 |
STMICROELECTRONICS S.R.I. |
发明人 |
ZAMBRANO RAFFAELE |
分类号 |
H01L27/04;H01L21/02;H01L21/768;H01L21/822;H01L21/8242;H01L27/06;H01L27/10;H01L27/108;H01L27/115;(IPC1-7):H01L29/00 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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