| 摘要 |
PURPOSE: To provide technique with which an Ru film for constituting the lower electrode of an information storing capacitor-element can be formed accurately in the inside of a hole. CONSTITUTION: After forming an Ru film 30a, which is the lower-electrode material to be deposited on the sidewall and the bottom portion of a deep hole 27 for forming therein an information storage capacitor element, the resultant structure is subjected to heat treatment in a reducing atmosphere. The Ru film is set as the laminated structure, of the Ru film 30a and an Ru film 30b. As a result, the impurities contained in the Ru film can be so removed effectively and the Ru film can be made dense.
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