Polysilicon-edge, base-emitter super self-aligned, low-power, high-frequency bipolar transistor and method of forming the transistor

摘要

A low-power high-frequency bipolar transistor is formed to have a small self-aligned intrinsic base region, and small self-aligned extrinsic base and emitter regions that contact the intrinsic base region. The small regions reduce the base resistance, the base-to-collector capacitance, and the base-to-emitter capacitance.