发明名称 Internal voltage generation circuit having stable operating characteristics at low external supply voltages
摘要 An internal voltage generation circuit is provided which can stably generate an internal supply voltage even if an external supply voltage decreases. The internal voltage generation circuit includes first and second level shifters, a differential amplifier and a driver. The first level shifter is connected to an internal supply voltage terminal and lowers the internal supply voltage to a predetermined voltage level. The second level shifter is connected to a reference voltage terminal and lowers a reference voltage to a predetermined voltage level. The differential amplifier compares the output voltage of the second level shifter with the output voltage of the first level shifter and amplifies the difference between the two output voltages. The driver generates the internal supply voltage in response to the output of the differential amplifier. The first and second level shifters may be source followers that decrease the internal supply voltage and the reference supply voltage, respectively, by a threshold voltage. Accordingly, the internal voltage generation circuit may stably generate the internal supply voltage even if the level of the external supply voltage is lowered, and restores the level of the internal supply voltage to its original level equal to the reference voltage even when the level of the internal supply voltage drops.
申请公布号 US6380799(B1) 申请公布日期 2002.04.30
申请号 US20000721130 申请日期 2000.11.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHUNG DAE-HYUN;LEE JUNG-BAE
分类号 G06F1/26;G05F1/56;G11C5/14;G11C11/407;G11C11/413;H01L21/822;H01L27/04;(IPC1-7):G05F1/10 主分类号 G06F1/26
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