| 摘要 |
PURPOSE: A semiconductor device is provided to obtain a structure of a TFT(thin film transistor), which can make fine the structure in a portion where a channel is formed, and can increase integration. CONSTITUTION: A transistor has a control electrode formed by providing a space section in a portion to a semiconductor substrate(1) where an insulation film is formed, and a channel member that is formed by a thin-film formation method so that the control electrode is covered and generates a plurality of channels with the control electrode. The channel is generated in the channel member on both surfaces of the control electrode, and the current drive capability of the transistor is increased. The interval between the semiconductor substrate and control electrode is made larger than the thickness of the channel member, and is simultaneously set to an interval for preventing a gap from being generated in formation, thus making larger the grain of polysilicon in a channel portion, and increasing the drain current when the transistor is on.
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