| 摘要 |
PROBLEM TO BE SOLVED: To surely release a low power consumption mode by surely shifting a semiconductor device to the low power consumption mode, and to reduce current consumption at the time of standby more drastically than heretofore in the semiconductor memory having a low power consumption mode. SOLUTION: This memory is provided with an entry circuit 1 and an internal voltage generating circuit 2. The internal voltage generating circuit 2 generates internal voltage supplied to the prescribed internal circuit 4 at the time of activation. At the time of operation of the internal voltage generating circuit 2, the prescribed electric power is consumed. The entry circuit 1 receives a control signal from the outside to non-activate the internal voltage generating circuit 1. Internal voltage is not generated owing to the non-activation of the internal voltage generating circuit 2, then power consumption is reduced. Therefore, a chip can easily be made in a low power consumption mode by the control signal from the outside.
|
