| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure capable of securing reliability concerning adhesion by filling a gap between wiring on the wiring layers for ground in the semiconductor device of a two-metal T-BGA structure without void and capable of improving production costs by shortening a production process. SOLUTION: In the semiconductor device of the two-metal T-BGA structure sticking a TAB wiring tape, with which a wiring layer 2 for signal is formed on one side of a tape base material 3 composed of an insulating film and a wiring layer 12' for ground to be electrically conducted with one part of the pattern of the wiring layer 2 for signal is formed on the other side, with a stiffener 15 through an adhesive agent 11', the thickness of metal foil to be used for the wiring layer 12' for ground on the side to be stuck to the stiffener 15 is made <=10μm thinner than conventional one and the thickness of the adhesive agent 11' for sticking the wiring layer 12' for ground and the stiffener 15 is made >=75μm thicker than conventional one. |
