| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device in which the domain can be controlled to have a required size without increasing the density of catalytic metal element or varying the thickness of an a-Si film, and to obtain a semiconductor device having a desired domain size. SOLUTION: An a-Si film 12 is heat treated to form an a-Si film 12a in which nuclei are generated. Heat treatment is carried out in N2 atmosphere at a temperature in the range of 500-700 deg.C. Domain size of a CGS film is determined by the density of nuclei. Subsequently, Ni is added, as a catalytic metal element for accelerating crystallization of Si, to the entire surface of the a-Si film 12a. It is then heat treated at 600 deg.C for 12 hours in a nitrogen atmosphere in order to crystallize the a-Si film 12a thus forming a CGD film 13. The domain size of the CGS film 13 is controlled as specified through the heat treatment.</p> |
