| 摘要 |
PROBLEM TO BE SOLVED: To reduce crosstalk noise by reducing the inter-line capacitance at a crowded cell part where insertion of a buffer cell is difficult, e.g. the periphery of a hard macro block, or a crowded line part where enlargement of line interval is difficult. SOLUTION: A plurality of kinds of cell for improving crosstalk noise having an external interface is buried in the gap of a hard mask block and then a cell for improving crosstalk noise is selected and inserted into the line of a semiconductor integrated circuit. When the signal transition periods of adjacent lines overlap, the improving cell is inserted into a line having a longer transition period. Alternatively, one of adjacent lines is shifted to other interconnection layer and a shield line is laid in the vacated region.
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