| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly accurate semiconductor device for analog IC exhibiting a high strength against ESD breakdown while employing a full depletion MOS transistor of SOI structure. SOLUTION: An SOI structure is formed in a part of a semiconductor substrate wherein a fuse element 510 for laser trimming, a pattern 610 for positioning laser trimming, a full depletion high rate MOS transistor 210, and a pleader resistor 410 comprising a plurality of resistors are formed in the SOI structure while a high breakdown strength MOS transistor and an ESD protective element 31 are formed in the semiconductor substrate.
|
