| 摘要 |
PROBLEM TO BE SOLVED: To provide an FET which is used in an oscillator or power amplifier operating in a range from microwave to millimeter wave, has a high forward voltage, and has a small series resistance. SOLUTION: In the field effect transistor having a gate electrode buried at its lower surface within a barrier layer, a p-n junction of at least one p-type and n-type layers is formed within the barrier layer. As a result, there can be realized a hetero junction field effect transistor which can provide a small series resistance at the time of its operation and a high forward voltage.
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