| 摘要 |
PROBLEM TO BE SOLVED: To overcome the problem such that actual measurement results of electric characteristics of a MOS transistor involve characteristics variations, and if SPICE transistor parameters are extracted from such measurement results, the involved variations reflect also on a simulation. SOLUTION: Thereshold voltages of a plurality of transistors are measured and statistically analyzed to determine a reasonable value of the L- or W- dependence of center characteristics of the threshold voltages. In a first stage of the SPICE transistor parameter extraction, conventionally, the parameter extraction are executed from measured values including variations, as they are. In a second stage, the SPICE parameters are corrected so that they are each a reasonable threshold voltage already determined every single size transistor. Thus, an SPICE transistor parameter free of the variations can be extracted.
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