发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To shorten a TAT by carrying out plural process steps, such as a plating process step, annealing process step and two CMP process steps, in a copper wiring process with one manufacturing apparatus and to suppress the cost of consumable materials by replacing the CMP process steps with another stages. SOLUTION: This apparatus is installed with an electrolytic plating chamber 11 where a substrate 91 is plated, an electrolytic polishing chamber 21 where the substrate 91 is electrolytically polished and a transporting device 83 which carries the substrate 91 into and out of the electrolytic plating chamber 11 and carries the substrate 91 into and out of the electrolytic polishing chamber 21. The apparatus has a transporting chamber 81 connected to the electrolytic plating chamber 11 and the electrolytic polishing chamber 21, respectively. The transporting chamber 81 may also be provided with the nonelectrolytic plating chamber, annealing chamber, liquid treating chamber, etc., not shown in Figure.</p>
申请公布号 JP2002121698(A) 申请公布日期 2002.04.26
申请号 JP20000312834 申请日期 2000.10.13
申请人 SONY CORP 发明人 NOGAMI TAKESHI;KOMAI HISANORI
分类号 C23C18/16;B24B37/04;C25D5/02;C25D7/12;C25D17/00;C25D19/00;C25F3/30;H01L21/00;H01L21/288;H01L21/306;H01L21/3063;H01L21/3205;H01L21/321;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):C25D19/00;H01L21/320 主分类号 C23C18/16
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