| 摘要 |
PROBLEM TO BE SOLVED: To provide a margin detection method of lithography conditions for preventing detects from being generated in a pattern. SOLUTION: An exposure mask to be inspected is used for carrying out pattern exposure to a reference chip under standard exposure conditions, the pattern exposure is carried out to a plurality of inspection chips by changing exposure conditions, and development treatment is made, thus manufacturing a first inspection wafer where the pattern with the same layout is formed in each chip (S1 to S2). The reference chip is compared with the pattern of the inspection chip, and a defect generation place where a pattern defect can be easily generated is specified in the layout (S3 to S5). The same exposure mask as one used for manufacturing the first inspection wafer is used, a second inspection wafer is manufactured where the lithography conditions are changed and the pattern is formed (S6). The defect generation place in the second inspection wafer is observed, thus detecting the margin of the lithography conditions (S7). |
