| 摘要 |
PROBLEM TO BE SOLVED: To easily achieve a high integration and non-defective product ratio. SOLUTION: A conductive plug 24 is formed of a polysilicon. A dielectric capacitor 25 is formed, by sequentially laminating a silicide film 31, diffused barrier film 32, lower electrode 28, dielectric film 29 and upper electrode 30 from a substrate side on the plug 24. Thus, material diffusion will no occur in the plug 24 and the electrode 28, even in crystallizing step of the dielectric at a high heat treating temperature, and a ferroelectric characteristics of the film 29 becomes proper. When the electrode 28 is formed of Ir of an Ir/IrO2, an SBT is used as the film 29, so that Ir precipitates in, for example, 6-inch wafer which is suppressed to 100 pieces or fewer, and the nondefective rate of an integrated FeRAM of 256 kbits can be set to 90% or higher. A polarization inverting charge amount is set to 10μC/cm2 or larger, and decision which does not produce errors can be made.
|
