| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, having an analog IC hybrid mounting a complete depletion type rapid MOS transistor on an SOI substrate, which is strong against ESD breakdown and a high breakdown voltage MOS transistor. SOLUTION: A laser-trimming positioning pattern has a high light reflectivity region and a low light reflectivity region. The high light reflectivity region is formed of a high light reflectivity from formed on a flat substrate. The low light reflectivity region is formed of a high light reflectivity film formed on a lattice for irregularly reflecting a light, a stripe or a dot-like pattern constituted of same polycrystal silicon film as a laser-trimming fuse element. |
