METHOD AND SYSTEM FOR DEPOSITION OF TRANSPARENT CONDUCTIVE THIN FILM

摘要

PROBLEM TO BE SOLVED: To stabilize film deposition rate and also stabilize film lengthening by suppressing the change in the surface state of a metal target with the lapse of time and to continuously deposit a transparent conductive thin film of stable film quality at high speed, in continuously depositing the transparent conductive thin film onto a long-size base material by reactive sputtering. SOLUTION: In the method for depositing the transparent conductive thin film, the periphery of the metal target 5 disposed in a manner to be apart from and opposed to the long-size base material 3 is surrounded by a shield wall 6 having an opening on the side facing the base material 3. Sputter gas is introduced into the inside of the shield wall 6 and reactive gas is introduced to the vicinity of the surface of the base material 3 respectively while continuously depositing the transparent conductive thin film by reactive sputtering onto the base material 3 being transferred.