| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an SiC semiconductor device having a gate electrode layer self-aligningly formed on a drain region and source region. SOLUTION: The semiconductor device comprises a P- type epitaxial layer 20 laminated on a P+ type SiC substrate 10; an N+ type drain region 30 and an N+ type source region 40 formed on a specified region of the epitaxial layer 20; oxide film 145, 140 formed on the surfaces of these regions; a recess trench 185 formed with the oxide films 145, 140 used as a mask on a channel region sandwiched between the drain and source regions 30, 40; a gate electrode insulation layer 60 formed in the trench 185 through a gate insulation film 50; a drain electrode 90, a source electrode 70 and a gate electrode (metal) 80 formed respectively on the drain region 30, the source region 40 and the gate electrode layer 60; a boron phosphorus silica glass 110 formed for insulating each electrode, a boron phosphorus silica glass 200 formed for protecting the substrate; and a substrate contact electrode 100 formed on the backside of the substrate 10.
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