发明名称 |
Ferroelectric memory device and manufacturing method thereof |
摘要 |
A long life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7/electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of ferroelectric characteristic to attain a long life ferroelectric memory device.
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申请公布号 |
US2002047146(A1) |
申请公布日期 |
2002.04.25 |
申请号 |
US20010984609 |
申请日期 |
2001.10.30 |
申请人 |
OGATA KIYOSHI;HORIKOSHI KAZUHIKO;SUENAGA KAZUFUMI;KATO HISAYUKI;YOSHIZUMI KEIICHI;YAMAZAKI MASAHITO |
发明人 |
OGATA KIYOSHI;HORIKOSHI KAZUHIKO;SUENAGA KAZUFUMI;KATO HISAYUKI;YOSHIZUMI KEIICHI;YAMAZAKI MASAHITO |
分类号 |
H01L21/8247;H01L21/00;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L27/12;H01L29/76;H01L29/788;H01L29/792;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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地址 |
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