Radio frequency ion plating apparatus

摘要

A radio frequency ion plating apparatus in which an evaporation source 10 and rotational electrode 2 holding substrate are disposed in a vacuum chamber having suitable gas introduced therein, radio frequency power is supplied through a mechanical contactor 3, an ion in plasma generated in a radio frequency discharge space causes a film surface on a substrate to bombard by dc bias voltage generated at the rotational electrode holding substrate. Within the vacuum chamber is disposed auxiliary electrode 9 for producing plasma to which is supplied radio frequency power separately from radio frequency power supplied to rotational electrode 2 holding substrate. Two radio frequencies supplied to the rotational electrode holding substrate and the auxiliary electrode, respectively, are used with different frequency and or different power.