| 摘要 |
A semiconductor device is disclosed that includes integrated insulated-gate field-effect transistor (IGFET) elements and one or more negative differential resistance (NDR) field-effect transistor elements, combined and formed on a common substrate. Thus, a variety of circuits, including logic and memory are implemented with a combination of conventional and NDR capable FETs. Because both types of elements share a number of common features, they can be fabricated with common processing operations to achieve better integration in a manufacturing facility.
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