METHOD FOR FABRICATING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to prevent a defect in a metal layer caused by developer or an etch member during a fabricating process by forming a lower passivation layer, and to easily guarantee a step coverage of the metal layer by continuously performing a high temperature reflow process. CONSTITUTION: An insulation layer is formed on a substrate(10). A predetermined portion of the insulation layer is etched to form a contact hole exposing the surface of the substrate. Titanium and nitride titanium are continuously deposited on the insulation layer, the sidewall of the contact hole and the substrate exposed to the inside of the contact hole to form the first barrier layer(18). Aluminium is deposited on the barrier layer and in the contact hole to form a metal layer(20). The metal layer is reflowed so that the metal layer is filled in the contact hole. The lower passivation layer(22) is formed on the reflowed metal layer, including an oxide material for preventing the metal layer from being damaged during a subsequent process. Nitride titanium is deposited on the lower passivation layer to form the second barrier layer(24).