发明名称 Semiconductor memory has sub word selecting circuit which switches selection of sub word selection line of memory cell array arranged on corresponding substrate plates using drivers
摘要 A sub word selecting circuit (124) provided in the semiconductor memory, switches selection of a sub word selection line of the redundant memory cell array arranged on the corresponding plates (n,n+1) of memory cell array group using redundancy sub word drivers (222a-222e). An Independent claim is included for semiconductor memory redundancy circuit replacement method.
申请公布号 DE10147201(A1) 申请公布日期 2002.04.25
申请号 DE20011047201 申请日期 2001.09.25
申请人 NEC CORP., TOKIO/TOKYO 发明人 YAMAKOSHI, HIROYUKI
分类号 G11C11/407;G11C11/401;G11C29/00;G11C29/04;(IPC1-7):G11C29/00 主分类号 G11C11/407
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