METHOD FOR FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING PHOTOMASK

摘要

PURPOSE: A method for fabricating a semiconductor integrated circuit device is provided to shorten an interval of time for fabricating a mask, by fabricating the semiconductor integrated circuit device and a photomask having a mask pattern including an organic layer in the same clean room. CONSTITUTION: A predetermined pattern is transcribed into the first semiconductor wafer by the first exposure treatment using the mask pattern including the organic layer. Whether the pattern of the photomask having the mask pattern including the organic layer is determined by inspecting the predetermined pattern transcribed into the first semiconductor wafer. A predetermined pattern is transcribed into the second semiconductor wafer by the second exposure treatment using the photomask having the mask pattern including the organic layer.