| 发明名称 |
Arrangement in a power mosfet |
| 摘要 |
Linearity and/or efficiency of a power MOS transistor comprising a plurality of transistor segments connected in parallel, is improved in that at least one group of said transistor segments has a different threshold voltage than the rest of the transistor segments.
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| 申请公布号 |
US2002047140(A1) |
申请公布日期 |
2002.04.25 |
| 申请号 |
US20010906697 |
申请日期 |
2001.07.18 |
| 申请人 |
MOLLER THOMAS;EKENSTAM NILS AF;JOHANSSON JAN;BALLARD TIMOTHY;LOPES GARY;PETERNEL MICHAEL |
发明人 |
MOLLER THOMAS;EKENSTAM NILS AF;JOHANSSON JAN;BALLARD TIMOTHY;LOPES GARY;PETERNEL MICHAEL |
| 分类号 |
H01L21/265;H01L27/088;H01L29/10;H01L29/417;H01L29/78;(IPC1-7):H01L29/80;H01L31/112 |
主分类号 |
H01L21/265 |
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