Process for compensating for etching stress during etching of a semiconductor wafer comprises exposing a substrate bead from the edge of the wafer forming a pattern using photolacquer

摘要

Process for compensating for etching stress during etching of a semiconductor wafer comprises exposing a substrate bead from the edge of the wafer forming a pattern using photolacquer. Preferred Features: The bead of silicon is removed from the whole periphery of the wafer. The bead has a width of 1 mm and a depth of 7000-8000 angstroms. The bead is etched in the wafer with the simultaneous formation of deep trenches. Etching is carried out for 10 minutes.