发明名称 High-Q inductive elements
摘要 A first insulator is formed on a base layer. A first conductor is formed on the first insulator. The first conductor is patterned. A second insulator is formed over the first insulator. A via hole is formed in the second insulator and is electrically coupled to the first conductor through the via hole. A second conductor is formed on the second insulator, and is electrically coupled to the first conductor by the via hole. The second conductor is patterned. A cavity is formed under the second conductor, and in the first and second insulators.
申请公布号 US6376895(B2) 申请公布日期 2002.04.23
申请号 US19990467991 申请日期 1999.12.20
申请人 MICRON TECHNOLOGY, INC. 发明人 FARRAR PAUL A.;FORBES LEONARD
分类号 H01F41/04;H01L21/02;H01L27/08;(IPC1-7):H01L29/00;H01L23/48;H01L23/52;H01L29/40 主分类号 H01F41/04
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