| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser of a long wavelength band having a low threshold and a high characteristic temperature. SOLUTION: This semiconductor laser element 10 is formed as a single or multiple quantum well structure having a high strined GaxIn1-xAs1-ySby well layer (wherein 0.003<=y<=0.008) in an active layer. This laser element comprises a laminated structure of, for example, an n-type GaAs (n=1×1018 cm-3) buffer layer 14, an n-type In0.49Ga0.51P (n=1×1018 cm-3) clad layer 16, a GaAs light confinement layer 18, an SQW active layer 20 having a GaInAsSb single quantum well layer, a GaAs light confinement layer 22, a p-type In0.49Ga0.51P (p=1×1018 cm-3) clad layer 24, and a p-type GaAs (p=3×1019 cm-3) contact layer 26 sequentially film formed on an n-type GaAs substrate 12 in plane (100). The SQW active layer has one of Ga0.61In0.39As0.9968Sb0.0032 quantum well layer having a compression strain of 2.82% and a GaAs barrier layer, and the well is 7.3 nm.
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