| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor switch circuit device in which the size of FETs is reduced by reducing the gate width and the chip size is also reduced by reducing the distance between pads and a wiring layer. SOLUTION: The reduction in the on-state resistance of an FET is considered as a problem of a secondary importance by focusing attention on the design by which isolation is ensured by omitting the shunt FET in a high-frequency band of 2.4 GHz or higher. Namely, in the compound semiconductor switch circuit device, the gate width of the FET for switch is set to 700μm or smaller for reducing its size and coupling of high-frequency signals, and the securement of the breakdown voltage is performed in a small space by providing an insulation film between the peripheral edge of the pads and the substrate. Consequently, the chip size can be reduced to a large extent.
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