| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its fabricating method in which process control is facilitated and a full depletion transistor can be fabricated easily. SOLUTION: The method for fabricating a semiconductor device comprises steps for preparing an SOI substrate 1, forming a gate oxide film 6b on the surface of a single crystal Si layer 4, forming a dummy gate electrode on the dummy gate oxide film, implanting impurity ions into the single crystal Si layer using the dummy gate as a mask, forming source-drain diffusion layers 16 and 17 in the single crystal Si layer by annealing, depositing a silicon oxide film on the entire surface including the dummy gate, exposing the upper surface of the dummy gate by CMP, etching the dummy gate electrode and the dummy gate oxide film using the silicon oxide film as a mask and etching the single crystal Si layer down to a specified depth, forming a gate oxide film 6b on the single crystal Si layer, and then forming a gate electrode 7b on the gate oxide film.
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