发明名称 SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having high performance in a high efficiency with high reliability by providing a constitution capable of producing in a mass production, by using a material considering its environment and controlling a light emitting wavelength in from green to ultraviolet wavelength regions. SOLUTION: A hexagonal crystal ZnO has a large exciton bonding energy, and hence exciton of high density exists even at ambient temperature. Thus, when the ZnO is used for an active layer 101, the element having a high light emitting efficiency is obtained. When a substrate (104) made of a hexagonal group III-V compound is used, a lattice alignment can be easily achieved. Accordingly, good epitaxial growth film of the hexagonal ZnO is obtained, and the efficient semiconductor light emitting element can be obtained.
申请公布号 JP2002118328(A) 申请公布日期 2002.04.19
申请号 JP20000309822 申请日期 2000.10.10
申请人 RICOH CO LTD 发明人 ITO AKIHIRO;SATO SHUNICHI
分类号 H01S5/327;H01S5/347;(IPC1-7):H01S5/327 主分类号 H01S5/327
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