METHOD FOR FABRICATING PHOTORESIST LAYER PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a photoresist layer pattern of a semiconductor device is provided to increase resolution of the photoresist layer pattern and to improve a profile characteristic of the photoresist layer pattern at a low price, by effectively preventing loss of an upper portion of an isolated line through a simple treatment using an alkali solution. CONSTITUTION: A chemical deposition deep ultraviolet(UV) photoresist layer(PR11) is formed on an insulation layer or metal interconnection(11) of a semiconductor substrate. Alkali solution is sprayed on the photoresist layer. A selective exposure and developing process is peformed through a mask regarding the photoresist layer on which the alkali solution is sprayed so that a photoresist layer pattern is formed.