| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device for using an element for promoting crystallization or a compound having the element, and for obtaining a crystalline silicon having superior productivity at a relatively high temperature and by heat treatment, using a laser beam. SOLUTION: An amorphous silicon film or one portion of the amorphous silicon film is brought into contact with the element for promoting crystallization, or the compound having the element. After that, the heat treatment is made, crystal growth is carried out from a portion that is brought into contact with the element or compound to a portion that is not brought into contact with the element or compound, and the silicon film having crystallizability is formed. Then, the laser beam or strong light is applied to the silicon film, and the irradiated silicon film is subjected to patterning and etched for obtaining an active layer. In the active layer, the portion in contact with the element or compound, and the tip of the crystal growth will not overlap with a channel forming region.</p> |
