| 摘要 |
PROBLEM TO BE SOLVED: To reduce line resistance, connection resistance and interconnection capacitance while enhancing electromigration resistance by preventing diffusion of copper even if an interconnection trench and a via hole made in an insulation film are directly filled with a metal principally comprising copper. SOLUTION: An SiN film 406, a BCB(benzocyclobutene) insulation film 407, an SiC film 408, a BCB insulation film 409, an SiC film 410 and an SiO2 film 411 are deposited on a Cu interconnection 405, a via hole 413 is opened by selective etching (d) and then an interconnection trench 414 is made (e). Subsequently, a Cu seed film 415 is deposited by MOCVD and a Cu film 416 is formed using the Cu seed film as an electrode (f). Excess Cu film is then removed by CMP, a Cu interconnection 417 connected with the Cu interconnection 405 through the via hole is formed, and then an SiC film 418 is formed (g).
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