| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device ensuring reliable electrostatic discharge protection characteristics in a high density integrated circuit by lowering the trigger voltage, more specifically a silicon controlled rectifier element(SCR). SOLUTION: In order to lower the trigger voltage, the SCR comprises a first conductivity type substrate 21, a second conductivity type semiconductor region 22 formed on the substrate, a first conductivity type first region 23 formed on the substrate, a second conductivity type second region 24 formed on the substrate, a second conductivity type third region 62 formed in the semiconductor region while being spaced apart by a specified distance from the boundary plane between the substrate and the semiconductor region, a first conductivity type fourth region 28 formed in the semiconductor region, and a second conductivity type fifth region 29 formed in the semiconductor region.
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