| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the driving voltage of an electron emission element by means of field emission and to provide a manufacturing method for the electron emission element without varying an emission current characteristic due to storage in the atmosphere, heating in the atmosphere and heating in vacuum. SOLUTION: This manufacturing method for the electron emission element comprises a process for forming an insulation film 12 on a silicon substrate 14, a process for forming an extraction electrode 13 on the insulation film 12, a process for forming an emitter 11 by removing the insulation film 12 and the extraction electrode 13 in a position corresponding to the emitter 11 on the silicon substrate 14 by means of etching, a process for forming a porous silicon layer 15 on the surface of the emitter 11, and a process for removing the porous silicon layer 15 on the surface of the emitter 11 by means of etching.</p> |
