| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pick up device wherein thickness of insulating films under a light shielding film on the periphery of an aperture of a light receiving part is reduced, while parasitic capacitance of a vertical transfer electrode is reduced and generation of smear can be restrained, and a method for manufacturing the device. SOLUTION: This solid-state imaging device is provided with a light receiving part 5 formed on a substrate 20; a transfer region 7a which is formed on the substrate adjacently to the light receiving part 5; a transfer electrode 12 which is formed on the substrate 20 being insulated from the transfer region 7a and to which a transfer voltage of a prescribed clock is applied, when charges which are generated in the light receiving part 5 and swept to the transfer region 7a are transferred in a prescribed direction; insulating films (34, 42a) which are formed covering at least the transfer electrode 12 and the light receiving part 5; and a light shielding film 50a which is formed on the insulating films (34, 42a), covers at least the transfer electrode 12, and has an aperture above the light receiving part 5. In the insulating films (34, 42a), film thickness above the transfer electrode 12 are greater than that of the other part.
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