Method of forming a silicon nitride layer on a semiconductor wafer

摘要

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 on to 500 Torr.